q?v~zy??q?v?_ra]w??qcabcq HFS8N70S 2 1 3 ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 22 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified HFS8N70S 700v n-channel mosfet symbol parameter value units v dss drain-source voltage 700 v i d drain current ? continuous (t c = 25 zq 7.0* a drain current ? continuous (t c = 100 zq 4.0* a i dm drain current ? pulsed (note 1) 28.0* a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 190 mj i ar avalanche current (note 1) 7.0 a e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 zq qqqqqqqqqqqqqqqqqqqqqqqqqqq^qu???q????qcf q 48 w 0.38 w/ q t j , t stg operating and storage temperature range -55 to +150 q t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 q symbol parameter typ. max. units r jc junction-to-case -- 2.6 `?q r ja junction-to-ambient -- 62.5 dec 2012 * drain current limited by maximum junction temperature bv dss = 700 v r ds(on) typ
i d = 7.0 a to-220f 1.gate 2. drain 3. source
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=7.3mh, i as =7.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 7.0 a i sm pulsed source-drain diode forward current -- -- 28.0 v sd source-drain diode forward voltage i s = 7.0 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 7.0 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 365 -- q qrr reverse recovery charge -- 3.4 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3q 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.5 a q -- 1.3 1.6 q on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3q 700 -- -- v ) bv dss / ) t j breakdown voltage temperature coefficient i d = 250 3]q?????????q?cf q -- 0.65 -- ?` q i dss zero gate voltage drain current v ds = 700 v, v gs = 0 v q -- -- 1 3q v ds = 560 v, t c = 125 q -- -- 10 3q i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 2q i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 2q off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz q -- 940 1220 ?q c oss output capacitance -- 105 135 ?q c rss reverse transfer capacitance -- 13 17 ?q dynamic characteristics t d(on) turn-on time v ds = 350 v, i d = 7.0 a, r g = 25 q q qqqqqqqqqqqqqqqqqqqqqqqqqqqq y??qe]fzq -- 17 45 q t r turn-on rise time -- 61 130 q t d(off) turn-off delay time -- 81 170 q t f turn-off fall time -- 65 140 q q g total gate charge v ds = 560v, i d = 7.0 a, v gs = 10 v y??qe]fzq -- 22 29 ?tq q gs gate-source charge -- 5 -- ?tq q gd gate-drain charge -- 9 -- ?tq switching characteristics source-drain diode maximum ratings and characteristics
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S i d , drain current [a] v gs , gate-source voltage [v] typical characteristics 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 150 o c
note : 1. v gs = 0v 2. 250 p s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 03691215 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v
note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics v ds , drain-source voltage [v] capacitance [pf] i d , drain current [a] v ds , drain-source voltage [v] 0 4 8 12162024 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] v ds = 130v v ds = 325v v ds = 520v * note : i d =7.0a v ds =140v v ds =350v v ds =560v
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S typical characteristics (continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 3.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 2.6 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] t 2 t 1 p dm 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S package dimension 0.70 0.20 0.20 3.30 0.20 15.87 0.20 12.42 0.20 2.54typ 6.68 0.20 0.80 0.20 1.47max 2.54 0.20 0.20 0.50 0.20 2.76 0.20 2.54typ 9.75 0.20 3 0.20 { v t y y w m g
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